История:
PIC18F23K20-I/SO
FD300R17KE4PHOSA1
IKW50N65ES5
IKW50N65ES5
Артикул:
IKW50N65ES5
Описание:
IKW50N65ES5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
274 W
Описание
Insulated-gate bipolar transistor-IKW50N65ES5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
274 W
Описание
Insulated-gate bipolar transistor-IKW50N65ES5: Биполярный транзистор с изолированным затвором

