История:
PIC32MX430F064L-V/PT
PIC32MX430F064HT-V/PT
PIC18F14Q40-I/SO
PIC18F05Q41-I/SL
PIC18F14Q41-I/SO
PIC18F05Q40-I/ST
2EDGVM-7.62-02P
LP211DRG4
PIC18F13K22-I/SS
PIC32MX370F512HT-V/PT
SD-M12A-03P-MM-SF8001
PIC32MX430F064HT-I/RG
PIC18F16Q40-I/SO
PIC18F2423-I/SO
PIC18F14K22-I/P
PIC18F16Q41-I/SO
MINISMDC075F-2
PIC18F16Q41-E/SS
PIC32MX430F064HT-I/MR
ASMD185F-2
PIC18F16Q40-E/P
PIC18F2553-I/SO
PIC18F2480-E/ML
LP311DRG4
IKW50N65F5FKSA1
IKW50N65F5FKSA1
Артикул:
IKW50N65F5FKSA1
Описание:
IKW50N65F5FKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
305 W
Описание
Insulated-gate bipolar transistor-IKW50N65F5FKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
305 W
Описание
Insulated-gate bipolar transistor-IKW50N65F5FKSA1: Биполярный транзистор с изолированным затвором