История:
PIC18F2553-I/SO
PIC18F2480-E/ML
LP311DRG4
IKW50N65H5AXKSA1
IKW50N65H5AXKSA1
Артикул:
IKW50N65H5AXKSA1
Описание:
IKW50N65H5AXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IKW50N65H5AXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IKW50N65H5AXKSA1: Биполярный транзистор с изолированным затвором

