IRG4BC30UPBF
IRG4BC30UPBF
Артикул:
IRG4BC30UPBF
Описание:
IRG4BC30UPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IRG4BC30UPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IRG4BC30UPBF: Биполярный транзистор с изолированным затвором