IRG4BC40SPBF
IRG4BC40SPBF
Артикул:
IRG4BC40SPBF
Описание:
IRG4BC40SPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4BC40SPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4BC40SPBF: Биполярный транзистор с изолированным затвором