IRG4BC40WPBF
IRG4BC40WPBF
Артикул:
IRG4BC40WPBF
Описание:
IRG4BC40WPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4BC40WPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4BC40WPBF: Биполярный транзистор с изолированным затвором