IRG4BH20K-SPBF
IRG4BH20K-SPBF
Артикул:
IRG4BH20K-SPBF
Описание:
IRG4BH20K-SPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.17 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
60 W
Описание
Insulated-gate bipolar transistor-IRG4BH20K-SPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.17 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
60 W
Описание
Insulated-gate bipolar transistor-IRG4BH20K-SPBF: Биполярный транзистор с изолированным затвором