IRG4IBC10UDPBF
IRG4IBC10UDPBF
Артикул:
IRG4IBC10UDPBF
Описание:
IRG4IBC10UDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
6.8 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-IRG4IBC10UDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
6.8 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-IRG4IBC10UDPBF: Биполярный транзистор с изолированным затвором