IRG4IBC20KDPBF
IRG4IBC20KDPBF
Артикул:
Описание:
IRG4IBC20KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11.5 A
Power Dispation
34 W
Описание
Insulated-gate bipolar transistor-IRG4IBC20KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11.5 A
Power Dispation
34 W
Описание
Insulated-gate bipolar transistor-IRG4IBC20KDPBF: Биполярный транзистор с изолированным затвором