IRG4IBC30KDPBF
IRG4IBC30KDPBF
Артикул:
IRG4IBC30KDPBF
Описание:
IRG4IBC30KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
17 A
Power Dispation
45 W
Описание
Insulated-gate bipolar transistor-IRG4IBC30KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
17 A
Power Dispation
45 W
Описание
Insulated-gate bipolar transistor-IRG4IBC30KDPBF: Биполярный транзистор с изолированным затвором