IRG4PC50FDPBF
IRG4PC50FDPBF
Артикул:
IRG4PC50FDPBF
Описание:
IRG4PC50FDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PC50FDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PC50FDPBF: Биполярный транзистор с изолированным затвором