IRG4PC50WPBF
IRG4PC50WPBF
Артикул:
IRG4PC50WPBF
Описание:
IRG4PC50WPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
55 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PC50WPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
55 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PC50WPBF: Биполярный транзистор с изолированным затвором