IRG4PF50WDPBF
IRG4PF50WDPBF
Артикул:
IRG4PF50WDPBF
Описание:
IRG4PF50WDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
51 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PF50WDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
51 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PF50WDPBF: Биполярный транзистор с изолированным затвором