IRG4PF50WPBF
IRG4PF50WPBF
Артикул:
IRG4PF50WPBF
Описание:
IRG4PF50WPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
51 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PF50WPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
900 V
Collector-Emitter Saturation Voltage
2.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
51 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PF50WPBF: Биполярный транзистор с изолированным затвором