IRG4PH30KDPBF
IRG4PH30KDPBF
Артикул:
IRG4PH30KDPBF
Описание:
IRG4PH30KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IRG4PH30KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IRG4PH30KDPBF: Биполярный транзистор с изолированным затвором