IRG4PH40UDPBF
IRG4PH40UDPBF
Артикул:
IRG4PH40UDPBF
Описание:
IRG4PH40UDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.43 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
41 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4PH40UDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.43 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
41 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IRG4PH40UDPBF: Биполярный транзистор с изолированным затвором