IRG4PH50KDPBF
IRG4PH50KDPBF
Артикул:
IRG4PH50KDPBF
Описание:
IRG4PH50KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PH50KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PH50KDPBF: Биполярный транзистор с изолированным затвором