История:
ATSAM4LS8BA-UUR
IRG4PH50UDPBF
IRG4PH50UDPBF
Артикул:
Описание:
IRG4PH50UDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PH50UDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IRG4PH50UDPBF: Биполярный транзистор с изолированным затвором

