IRG4PSC71KDPBF
IRG4PSC71KDPBF
Артикул:
IRG4PSC71KDPBF
Описание:
IRG4PSC71KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.83 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
85 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSC71KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.83 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
85 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSC71KDPBF: Биполярный транзистор с изолированным затвором