История:
IRG4PC30FDPBF
IRG4PH40UD2-EP
IRG4PSC71UDPBF
IRG4PSC71UDPBF
Артикул:
IRG4PSC71UDPBF
Описание:
IRG4PSC71UDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
85 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSC71UDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
85 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSC71UDPBF: Биполярный транзистор с изолированным затвором

