История:
IRG4BH20K-STRLP
CDDFN6-0504P
IRG4PSH71KDPBF
IRG4PSH71KDPBF
Артикул:
IRG4PSH71KDPBF
Описание:
IRG4PSH71KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.97 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSH71KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.97 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
350 W
Описание
Insulated-gate bipolar transistor-IRG4PSH71KDPBF: Биполярный транзистор с изолированным затвором

