История:
IRG4PC30FDPBF
IRG4PH40UD2-EP
IRG7PH42UDPBF
IRG7PH42UDPBF
Артикул:
IRG7PH42UDPBF
Описание:
IRG7PH42UDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
85 A
Power Dispation
320 W
Описание
Insulated-gate bipolar transistor-IRG7PH42UDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
85 A
Power Dispation
320 W
Описание
Insulated-gate bipolar transistor-IRG7PH42UDPBF: Биполярный транзистор с изолированным затвором

