История:
IRG4PH40KDPBF
IRGB30B60KPBF
IRGB30B60KPBF
Артикул:
IRGB30B60KPBF
Описание:
IRGB30B60KPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-IRGB30B60KPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-IRGB30B60KPBF: Биполярный транзистор с изолированным затвором

