История:
IRG4BC30FD-SPBF
IRG4BH20K-STRLP
CDDFN6-0504P
IRGB4062DPBF
IRGB4062DPBF
Артикул:
IRGB4062DPBF
Описание:
IRGB4062DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IRGB4062DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IRGB4062DPBF: Биполярный транзистор с изолированным затвором

