IRGB4620DPBF
IRGB4620DPBF
Артикул:
Описание:
IRGB4620DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IRGB4620DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IRGB4620DPBF: Биполярный транзистор с изолированным затвором