IRGIB10B60KD1P
IRGIB10B60KD1P
Артикул:
IRGIB10B60KD1P
Описание:
IRGIB10B60KD1P
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
44 W
Описание
Insulated-gate bipolar transistor-IRGIB10B60KD1P: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
44 W
Описание
Insulated-gate bipolar transistor-IRGIB10B60KD1P: Биполярный транзистор с изолированным затвором