IRGP20B60PDPBF
IRGP20B60PDPBF
Артикул:
IRGP20B60PDPBF
Описание:
IRGP20B60PDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
220 W
Описание
Insulated-gate bipolar transistor-IRGP20B60PDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
220 W
Описание
Insulated-gate bipolar transistor-IRGP20B60PDPBF: Биполярный транзистор с изолированным затвором