История:
IRG4PH40UD2-EP
IRGP30B60KD-EP
IRGP30B60KD-EP
Артикул:
IRGP30B60KD-EP
Описание:
IRGP30B60KD-EP
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
304 W
Описание
Insulated-gate bipolar transistor-IRGP30B60KD-EP: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
304 W
Описание
Insulated-gate bipolar transistor-IRGP30B60KD-EP: Биполярный транзистор с изолированным затвором

