IRGP35B60PDPBF
IRGP35B60PDPBF
Артикул:
IRGP35B60PDPBF
Описание:
IRGP35B60PDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
308 W
Описание
Insulated-gate bipolar transistor-IRGP35B60PDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
308 W
Описание
Insulated-gate bipolar transistor-IRGP35B60PDPBF: Биполярный транзистор с изолированным затвором