IRGP4062DPBF
IRGP4062DPBF
Артикул:
IRGP4062DPBF
Описание:
IRGP4062DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IRGP4062DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IRGP4062DPBF: Биполярный транзистор с изолированным затвором