IRGP4063PBF
IRGP4063PBF
Артикул:
IRGP4063PBF
Описание:
IRGP4063PBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
96 A
Power Dispation
330 W
Описание
Insulated-gate bipolar transistor-IRGP4063PBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.14 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
96 A
Power Dispation
330 W
Описание
Insulated-gate bipolar transistor-IRGP4063PBF: Биполярный транзистор с изолированным затвором