IRGP4066DPBF
IRGP4066DPBF
Артикул:
IRGP4066DPBF
Описание:
IRGP4066DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
140 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-IRGP4066DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
140 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-IRGP4066DPBF: Биполярный транзистор с изолированным затвором