IRGP4266DPBF
IRGP4266DPBF
Артикул:
IRGP4266DPBF
Описание:
IRGP4266DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
140 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IRGP4266DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
140 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IRGP4266DPBF: Биполярный транзистор с изолированным затвором