IRGP50B60PD1PBF
IRGP50B60PD1PBF
Артикул:
IRGP50B60PD1PBF
Описание:
IRGP50B60PD1PBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
390 W
Описание
Insulated-gate bipolar transistor-IRGP50B60PD1PBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
390 W
Описание
Insulated-gate bipolar transistor-IRGP50B60PD1PBF: Биполярный транзистор с изолированным затвором