IRGPS46160DPBF
IRGPS46160DPBF
Артикул:
IRGPS46160DPBF
Описание:
IRGPS46160DPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-IRGPS46160DPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-IRGPS46160DPBF: Биполярный транзистор с изолированным затвором