IRGPS60B120KDP
IRGPS60B120KDP
Артикул:
IRGPS60B120KDP
Описание:
IRGPS60B120KDP
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.33 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
105 A
Power Dispation
595 W
Описание
Insulated-gate bipolar transistor-IRGPS60B120KDP: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.33 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
105 A
Power Dispation
595 W
Описание
Insulated-gate bipolar transistor-IRGPS60B120KDP: Биполярный транзистор с изолированным затвором