IRGR3B60KD2TRRP
IRGR3B60KD2TRRP
Артикул:
IRGR3B60KD2TRRP
Описание:
IRGR3B60KD2TRRP
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
7.8 A
Power Dispation
52 W
Описание
Insulated-gate bipolar transistor-IRGR3B60KD2TRRP: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
7.8 A
Power Dispation
52 W
Описание
Insulated-gate bipolar transistor-IRGR3B60KD2TRRP: Биполярный транзистор с изолированным затвором