IRGS30B60KTRRP
IRGS30B60KTRRP
Артикул:
IRGS30B60KTRRP
Описание:
IRGS30B60KTRRP
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-IRGS30B60KTRRP: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
370 W
Описание
Insulated-gate bipolar transistor-IRGS30B60KTRRP: Биполярный транзистор с изолированным затвором