IRGS4B60KD1TRRP
IRGS4B60KD1TRRP
Артикул:
IRGS4B60KD1TRRP
Описание:
IRGS4B60KD1TRRP
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
63 W
Описание
Insulated-gate bipolar transistor-IRGS4B60KD1TRRP: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
63 W
Описание
Insulated-gate bipolar transistor-IRGS4B60KD1TRRP: Биполярный транзистор с изолированным затвором