IRGS6B60KDPBF
IRGS6B60KDPBF
Артикул:
IRGS6B60KDPBF
Описание:
IRGS6B60KDPBF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
90 W
Описание
Insulated-gate bipolar transistor-IRGS6B60KDPBF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
90 W
Описание
Insulated-gate bipolar transistor-IRGS6B60KDPBF: Биполярный транзистор с изолированным затвором