ISL9V3040S3ST-F085C
ISL9V3040S3ST-F085C
Артикул:
ISL9V3040S3ST-F085C
Описание:
ISL9V3040S3ST-F085C
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
21 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-ISL9V3040S3ST-F085C: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
21 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-ISL9V3040S3ST-F085C: Биполярный транзистор с изолированным затвором