ISL9V5045S3ST-F085
ISL9V5045S3ST-F085
Артикул:
ISL9V5045S3ST-F085
Описание:
ISL9V5045S3ST-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
480 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
51 A
Power Dispation
300 mW
Описание
Insulated-gate bipolar transistor-ISL9V5045S3ST-F085: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
480 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
51 A
Power Dispation
300 mW
Описание
Insulated-gate bipolar transistor-ISL9V5045S3ST-F085: Биполярный транзистор с изолированным затвором