История:
IXGH40N120A2
IXA12IF1200HB
IXA12IF1200HB
Артикул:
IXA12IF1200HB
Описание:
IXA12IF1200HB
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
85 W
Описание
Insulated-gate bipolar transistor-IXA12IF1200HB: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
85 W
Описание
Insulated-gate bipolar transistor-IXA12IF1200HB: Биполярный транзистор с изолированным затвором

