IXA17IF1200HJ
IXA17IF1200HJ
Артикул:
IXA17IF1200HJ
Описание:
IXA17IF1200HJ
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
28 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IXA17IF1200HJ: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
28 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IXA17IF1200HJ: Биполярный транзистор с изолированным затвором