IXA20I1200PB
IXA20I1200PB
Артикул:
IXA20I1200PB
Описание:
IXA20I1200PB
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
33 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IXA20I1200PB: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
33 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IXA20I1200PB: Биполярный транзистор с изолированным затвором