История:
PIC32MX675F256HT-80I/PT
IXGH40N120A2
IXA27IF1200HJ
IXA27IF1200HJ
Артикул:
IXA27IF1200HJ
Описание:
IXA27IF1200HJ
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
43 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IXA27IF1200HJ: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
43 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IXA27IF1200HJ: Биполярный транзистор с изолированным затвором

