IXA55I1200HJ
IXA55I1200HJ
Артикул:
IXA55I1200HJ
Описание:
IXA55I1200HJ
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
84 A
Power Dispation
290 W
Описание
Insulated-gate bipolar transistor-IXA55I1200HJ: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
84 A
Power Dispation
290 W
Описание
Insulated-gate bipolar transistor-IXA55I1200HJ: Биполярный транзистор с изолированным затвором