IXBF32N300
IXBF32N300
Артикул:
IXBF32N300
Описание:
IXBF32N300
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBF32N300: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBF32N300: Биполярный транзистор с изолированным затвором