IXBF40N160
IXBF40N160
Артикул:
IXBF40N160
Описание:
IXBF40N160
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1.6 kV
Collector-Emitter Saturation Voltage
6.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
28 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXBF40N160: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1.6 kV
Collector-Emitter Saturation Voltage
6.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
28 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXBF40N160: Биполярный транзистор с изолированным затвором