IXBF55N300
IXBF55N300
Артикул:
IXBF55N300
Описание:
IXBF55N300
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
86 A
Power Dispation
357 W
Описание
Insulated-gate bipolar transistor-IXBF55N300: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
86 A
Power Dispation
357 W
Описание
Insulated-gate bipolar transistor-IXBF55N300: Биполярный транзистор с изолированным затвором